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NTLGD3502N
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 1)
Junction-to-Ambient – t ≤ 5 s (Note 1)
Junction-to-Ambient – Steady State min Pad (Note 2)
Junction-to-Ambient – Pulsed (25% duty cycle) min Pad (Note 2)
Symbol
R q JA
R q JA
R q JA
R q JA
Max
72
40
110
60
Unit
° C/W
MOSFET I ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
Drain-to-Source Breakdown
Voltage
Drain-to-Source Breakdown
Voltage Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
I D = 250 m A, ref to 25 ° C
20
10
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V, V DS = 16 V
T J = 25 ° C
1.0
m A
T J = 125 ° C
10
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
On Characteristics (Note 3)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250 m A
1.0
1.7
2.0
V
Negative Threshold Temperature
V GS(TH) /T J
-4.4
mV/ ° C
Coefficient
Drain-to-Source On Resistance
Forward Transconductance
R DS(on)
g FS
V GS = 4.5 V, I D = 4.3 A
V DS = 10 V, I D = 4.0 A
50
5.9
60
m W
S
Charges, Capacitances & Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
C ISS
C OSS
C RSS
Q G(TOT)
Q GS
V GS = 0 V, f = 1 MHz, V DS = 10 V
V GS = 4.5 V, V DS = 10 V; I D = 4.3 A
(Note 3)
250
138
52
2.9
1.0
480
200
90
4.0
pF
nC
Gate-to-Drain Charge
Q GD
1.1
Gate Resistance
R G
1.5
W
Switching Characteristics, V GS = 4.5 V (Note 4)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t d(ON)
t r
t d(OFF)
t f
V GS = 4.5 V, V DD = 10 V,
I D = 4.3 A, R G = 10 W
7.0
17.5
8.6
3.3
12
25
15
5.0
ns
Drain-Source Diode Characteristics
Forward Diode Voltage
V SD
V GS = 0 V, I S = 1.6 A
T J = 25 ° C
0.78
1.2
V
T J = 125 ° C
0.63
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t RR
t a
t b
Q RR
V GS = 0 V, d ISD /d t = 100 A/ m s,
I S = 1.0 A
16.7
8.2
8.5
7.0
ns
nC
3. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%
4. Switching characteristics are independent of operating junction temperatures
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